Three Litho-Process-Litho Approaches for 2D Double Patterning at the 32nm Half Pitch Node
نویسندگان
چکیده
منابع مشابه
Analysis of higher order pitch division for sub-32nm lithography
The three knobs of optical lithography, namely process factor k1, wavelength (λ) and numerical aperture (NA) have been constantly pushed to print smaller features. To get an equivalent k1 value below the fundamental limit of 0.25, double patterning (DP) has recently emerged as a viable solution for the 32nm lithography node. Various DP techniques exist such as litho-etch-litho-etch (LELE), lith...
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Litho-etch-litho-etch (LELE) double patterning lithography (DPL) is a strong candidate for BEOL patterning at the 20nm logic half-node (sub-80nm pitch). In double patterning lithography, layout pattern features must be assigned opposite colors if their spacing is less than the minimum coloring spacing. However, complex layouts usually have features that are separated by less than the minimum co...
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ژورنال
عنوان ژورنال: Journal of Photopolymer Science and Technology
سال: 2010
ISSN: 0914-9244,1349-6336
DOI: 10.2494/photopolymer.23.185